PUBLISHER: The Business Research Company | PRODUCT CODE: 1546490
PUBLISHER: The Business Research Company | PRODUCT CODE: 1546490
A gallium arsenide (GaAs) radio frequency (RF) semiconductor is crafted from gallium and arsenic, specifically tailored for high-frequency electronic devices. These semiconductors find extensive application in wireless communication systems, radar, and satellite technology due to their high electron mobility, wide bandgap, and excellent performance at elevated frequencies.
The primary components of GaAs RF semiconductors include a power amplifier, low-noise amplifier, filter, duplexer, RF mixer, switch, and other essential devices. A power amplifier enhances signal strength, enabling it to drive speakers, transmitters, or other high-power devices. These semiconductors operate across various frequencies such as ultra-high frequency (UHF) and very high frequency (VHF), with different voltage requirements ranging from up to 5 volts to over 20 volts. End users span telecommunications, consumer electronics, aerospace, defense, automotive, community antenna television (CATV), wired broadband, and other sectors.
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market research report is one of a series of new reports from The Business Research Company that provides gallium arsenide (GaAs) radio frequency (RF) semiconductor market statistics, including gallium arsenide (GaAs) radio frequency (RF) semiconductor industry global market size, regional shares, competitors with a gallium arsenide (GaAs) radio frequency (RF) semiconductor market share, detailed gallium arsenide (GaAs) radio frequency (RF) semiconductor market segments, market trends and opportunities, and any further data you may need to thrive in the gallium arsenide (GaAs) radio frequency (RF) semiconductor industry. This gallium arsenide (GaAs) radio frequency (RF) semiconductor market research report delivers a complete perspective on everything you need, with an in-depth analysis of the current and future scenarios of the industry.
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market size has grown strongly in recent years. It will grow from $1.95 billion in 2023 to $2.10 billion in 2024 at a compound annual growth rate (CAGR) of 7.7%. The increase during the historical period was driven by rising demand for high-performance wireless devices, advancements in GaAs technology, expansion in the automotive sector, growing significance of advanced RF devices, smart grid technologies, and developments in renewable energy.
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market size is expected to see strong growth in the next few years. It will grow to $2.84 billion in 2028 at a compound annual growth rate (CAGR) of 7.9%. Anticipated growth in the forecast period is driven by escalating demand for high-performance wireless devices, more efficient RF semiconductor devices, expanding adoption of renewable energy solutions, increased demand for advanced RF devices, and the necessity for enhanced radar capabilities. Key trends expected in this period include the proliferation of advanced wireless communication technologies, advancements in GaAs technology, growth in the automotive and energy industries, expansion in emerging markets, and heightened importance of advanced RF devices in aerospace and defense.
The rise of 5G technology is expected to drive growth in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market. 5G represents the latest evolution in mobile networks, promising faster data speeds, reduced latency, and more reliable connections. This technology's adoption is increasing due to the growing demand for faster and more dependable mobile internet, fueled by the expansion of smartphones and data-intensive applications. GaAs RF semiconductors play a crucial role in 5G by offering high electron mobility and operating at higher frequencies, which enhances signal transmission and reception for improved speed, capacity, and coverage. For example, by September 2023, North America had achieved an exceptional 40% penetration rate for 5G, marking a 25.5% growth in the first half of that year. Projections suggest that North America's 5G connections could reach 669 million by 2028, underscoring the significant impact of 5G technology on the gallium arsenide (GaAs) RF semiconductor market.
Leading companies in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market are innovating with pseudomorph high-electron-mobility transistor (pHEMT) technology to enhance performance in high-frequency applications. This technology aims to achieve higher efficiency and improved signal processing capabilities in advanced transistors. For instance, in June 2022, WIN Semiconductors Corp., based in Taiwan, introduced PP10-20, the latest iteration of its 0.1µm gallium arsenide (GaAs) pHEMT technology, building upon the PP10 platform. This second-generation technology offers significantly enhanced transistor gain, with an improved transit frequency (fT) of 160 GHz and a maximum oscillation frequency (fmax) of 240 GHz, while maintaining reliable operation at 4V. These advancements are crucial for applications such as backhaul power amplifiers and high-linearity receivers across the W-band to D-band spectrum.
In October 2023, CML Microsystems Plc, a semiconductor company headquartered in the UK, completed the acquisition of Microwave Technology Inc. (MwT) for an undisclosed sum. This strategic move is intended to enrich CML Microsystems Plc's product lineup, strengthen support infrastructure and research and development capabilities, and capitalize on MwT's deep expertise in system-level comprehension, product fabrication, and packaging technologies. The primary objective is to expand market presence globally, particularly in the USA. Microwave Technology Inc. (MwT), based in the US, specializes in the production of gallium arsenide (GaAs) and gallium nitride (GaN)-based monolithic microwave integrated circuits (MMICs), amplifier products, and discrete devices.
Major companies operating in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market are Broadcom Inc., Semiconductor Components Industries LLC, NEC Corporation, Texas Instruments Incorporated, Infineon Technologies AG, Murata Manufacturing Co. Ltd., NXP Semiconductors N.V., Analog Devices Inc., ON Semiconductor Corporation, Microchip Technology Inc., Skyworks Solutions Inc., Keysight Technologies Inc., Qorvo Inc., Maxim Integrated Products Inc., United Monolithic Semiconductors S.A.S., RF Micro Devices Inc., WIN Semiconductors Corp., TriQuint Semiconductor, Inc., OMMIC S.A.S., Vital Materials Co. Ltd
Asia-Pacific was the largest region in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market in 2023. The regions covered in the gallium arsenide (GaAs) radio frequency (RF) semiconductor market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
The countries covered in the gallium arsenide (gaas) radio frequency (rf) semiconductor market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
The gallium arsenide (GaAs) radio frequency (RF) semiconductor market consists of the sale of high-power amplifiers, low-noise amplifiers, and transistors. Values in this market are 'factory gate' values, that is, the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
Gallium Arsenide (GaAs) Radio Frequency (RF) Semiconductor Global Market Report 2024 from The Business Research Company provides strategists, marketers and senior management with the critical information they need to assess the market.
This report focuses on gallium arsenide (GaAs) radio frequency (RF) semiconductor market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
Where is the largest and fastest growing market for gallium arsenide (GaAs) radio frequency (RF) semiconductor ? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward? The gallium arsenide (GaAs) radio frequency (RF) semiconductor market global report from the Business Research Company answers all these questions and many more.
The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, competitive landscape, market shares, trends and strategies for this market. It traces the market's historic and forecast market growth by geography.
The impact of sanctions, supply chain disruptions, and altered demand for goods and services due to the Russian Ukraine war, impacting various macro-economic factors and parameters in the Eastern European region and its subsequent effect on global markets.
The impact of higher inflation in many countries and the resulting spike in interest rates.
The continued but declining impact of COVID-19 on supply chains and consumption patterns.