Global Insulated-Gate Bipolar Transistors (IGBTs) Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032

Description

List of Tables

The global demand for Insulated-Gate Bipolar Transistors (IGBTs) Market is presumed to reach the market size of nearly USD 45.47 Billion by 2032 from USD 18.3 Billion in 2023 with a CAGR of 10.64% under the study period 2024-2032.

An insulated-gate bipolar transistor (IGBT) is a power switching transistor that combines the features of MOSFETs and BJTs. It consists of four alternating layers (P-N-P-N) controlled by a metal-oxide-semiconductor (MOS) gate structure. It is used in power supply, motor control circuits, and power electronics applications, such as inverters and converters. The main benefit of using the IGBT over other transistor devices is its high voltage capability, low ON-resistance, ease of drive, and relatively fast switching speeds. It's a good choice for moderate speed and high voltage applications such as pulse-width modulated (PWM), variable speed control, frequency converter applications operating in the hundreds of kilohertz range, and switch-mode power supplies or solar-powered DC-AC inverter.

MARKET DYNAMICS

The global insulated-gate bipolar transistors (IGBTs) market is forecasted to grow considerably during the forecast period. The rising trend of smart homes, smart cities, increasing demand for electric vehicles, and the need for high voltage operating devices are expected to swell demand for insulated-gate bipolar transistors (IGBTs). Insulated-gate bipolar transistors (IGBTs) have become a successful device due to their superior features. High-speed switching rate and optimized power loss, ease-of-control at high voltage, as it enables higher frequency with enhanced efficiency, has caused increased deployment of IGBTs into grid infrastructure. Smart grids are replacing old grid networks; this will create opportunities for the market. However, current leakage at high temperatures hampers the market growth.

The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of Insulated-Gate Bipolar Transistors (IGBTs). The growth and trends of Insulated-Gate Bipolar Transistors (IGBTs) industry provide a holistic approach to this study.

MARKET SEGMENTATION

This section of the Insulated-Gate Bipolar Transistors (IGBTs) market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.

By Type

Discrete IGBT
IGBT Module

By Power Rating

High Power
Medium Power
Low Power

By Application

Energy & Power
Consumer Electronics
Inverter & UPS
Electric Vehicle
Industrial System
Others
Regional Analysis

This section covers the regional outlook, which accentuates current and future demand for the Insulated-Gate Bipolar Transistors (IGBTs) market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.

The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the Insulated-Gate Bipolar Transistors (IGBTs) market include Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors, ON Semiconductor Corporation, Renesas Electronics Corporation, Texas Instruments Incorporated, Toshiba Corporation. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.

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Product Code: VMR11215602

1. PREFACE

1.1. Report Description
- 1.1.1 Objective
- 1.1.2 Target Audience
- 1.1.3 Unique Selling Proposition (USP) & offerings
1.2. Research Scope
1.3. Research Methodology
- 1.3.1 Market Research Process
- 1.3.2 Market Research Methodology

2. EXECUTIVE SUMMARY

2.1. Highlights of Market
2.2. Global Market Snapshot

3. INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) - INDUSTRY ANALYSIS

3.1. Introduction - Market Dynamics
3.2. Market Drivers
3.3. Market Restraints
3.4. Opportunities
3.5. Industry Trends
3.6. Porter's Five Force Analysis
3.7. Market Attractiveness Analysis
- 3.7.1 Market Attractiveness Analysis By Type
- 3.7.2 Market Attractiveness Analysis By Power Rating
- 3.7.3 Market Attractiveness Analysis By Application
- 3.7.4 Market Attractiveness Analysis By Region

4. VALUE CHAIN ANALYSIS

4.1. Value Chain Analysis
4.2. Raw Material Analysis
- 4.2.1 List of Raw Materials
- 4.2.2 Raw Material Manufactures List
- 4.2.3 Price Trend of Key Raw Materials
4.3. List of Potential Buyers
4.4. Marketing Channel
- 4.4.1 Direct Marketing
- 4.4.2 Indirect Marketing
- 4.4.3 Marketing Channel Development Trend

5. GLOBAL INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) MARKET ANALYSIS BY TYPE

5.1. Overview By Type
5.2. Historical and Forecast Data Analysis By Type
5.3. Discrete IGBT Historic and Forecast Sales By Regions
5.4. IGBT Module Historic and Forecast Sales By Regions

6. GLOBAL INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) MARKET ANALYSIS BY POWER RATING

6.1. Overview By Power Rating
6.2. Historical and Forecast Data Analysis By Power Rating
6.3. High Power Historic and Forecast Sales By Regions
6.4. Medium Power Historic and Forecast Sales By Regions
6.5. Low Power Historic and Forecast Sales By Regions

7. GLOBAL INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) MARKET ANALYSIS BY APPLICATION

7.1. Overview By Application
7.2. Historical and Forecast Data Analysis By Application
7.3. Energy & Power Historic and Forecast Sales By Regions
7.4. Consumer Electronics Historic and Forecast Sales By Regions
7.5. Inverter & UPS Historic and Forecast Sales By Regions
7.6. Electric Vehicle Historic and Forecast Sales By Regions
7.7. Industrial System Historic and Forecast Sales By Regions
7.8. Others Historic and Forecast Sales By Regions

8. GLOBAL INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) MARKET ANALYSIS BY GEOGRAPHY

8.1. Regional Outlook
8.2. Introduction
8.3. North America Sales Analysis
- 8.3.1 Overview, Historic and Forecast Data Sales Analysis
- 8.3.2 North America By Segment Sales Analysis
- 8.3.3 North America By Country Sales Analysis
- 8.3.4 United States Sales Analysis
- 8.3.5 Canada Sales Analysis
- 8.3.6 Mexico Sales Analysis
8.4. Europe Sales Analysis
- 8.4.1 Overview, Historic and Forecast Data Sales Analysis
- 8.4.2 Europe By Segment Sales Analysis
- 8.4.3 Europe By Country Sales Analysis
- 8.4.4 United Kingdom Sales Analysis
- 8.4.5 France Sales Analysis
- 8.4.6 Germany Sales Analysis
- 8.4.7 Italy Sales Analysis
- 8.4.8 Russia Sales Analysis
- 8.4.9 Rest Of Europe Sales Analysis
8.5. Asia Pacific Sales Analysis
- 8.5.1 Overview, Historic and Forecast Data Sales Analysis
- 8.5.2 Asia Pacific By Segment Sales Analysis
- 8.5.3 Asia Pacific By Country Sales Analysis
- 8.5.4 China Sales Analysis
- 8.5.5 India Sales Analysis
- 8.5.6 Japan Sales Analysis
- 8.5.7 South Korea Sales Analysis
- 8.5.8 Australia Sales Analysis
- 8.5.9 South East Asia Sales Analysis
- 8.5.10 Rest Of Asia Pacific Sales Analysis
8.6. Latin America Sales Analysis
- 8.6.1 Overview, Historic and Forecast Data Sales Analysis
- 8.6.2 Latin America By Segment Sales Analysis
- 8.6.3 Latin America By Country Sales Analysis
- 8.6.4 Brazil Sales Analysis
- 8.6.5 Argentina Sales Analysis
- 8.6.6 Peru Sales Analysis
- 8.6.7 Chile Sales Analysis
- 8.6.8 Rest of Latin America Sales Analysis
8.7. Middle East & Africa Sales Analysis
- 8.7.1 Overview, Historic and Forecast Data Sales Analysis
- 8.7.2 Middle East & Africa By Segment Sales Analysis
- 8.7.3 Middle East & Africa By Country Sales Analysis
- 8.7.4 Saudi Arabia Sales Analysis
- 8.7.5 UAE Sales Analysis
- 8.7.6 Israel Sales Analysis
- 8.7.7 South Africa Sales Analysis
- 8.7.8 Rest Of Middle East And Africa Sales Analysis

9. COMPETITIVE LANDSCAPE OF THE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) COMPANIES

9.1. Insulated-Gate Bipolar Transistors (IGBTs) Market Competition
9.2. Partnership/Collaboration/Agreement
9.3. Merger And Acquisitions
9.4. New Product Launch
9.5. Other Developments

10. COMPANY PROFILES OF INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS) INDUSTRY

10.1. Top Companies Market Share Analysis
10.2. Market Concentration Rate
10.3. Infineon Technologies AG
- 10.3.1 Company Overview
- 10.3.2 Company Revenue
- 10.3.3 Products
- 10.3.4 Recent Developments
10.4. Mitsubishi Electric Corporation
- 10.4.1 Company Overview
- 10.4.2 Company Revenue
- 10.4.3 Products
- 10.4.4 Recent Developments
10.5. NXP Semiconductors
- 10.5.1 Company Overview
- 10.5.2 Company Revenue
- 10.5.3 Products
- 10.5.4 Recent Developments
10.6. ON Semiconductor Corporation
- 10.6.1 Company Overview
- 10.6.2 Company Revenue
- 10.6.3 Products
- 10.6.4 Recent Developments
10.7. Renesas Electronics Corporation
- 10.7.1 Company Overview
- 10.7.2 Company Revenue
- 10.7.3 Products
- 10.7.4 Recent Developments
10.8. Texas Instruments Incorporated
- 10.8.1 Company Overview
- 10.8.2 Company Revenue
- 10.8.3 Products
- 10.8.4 Recent Developments
10.9. Toshiba Corporation
- 10.9.1 Company Overview
- 10.9.2 Company Revenue
- 10.9.3 Products
- 10.9.4 Recent Developments

Note - In company profiling, financial details and recent developments are subject to availability or might not be covered in the case of private companies