PUBLISHER: Value Market Research | PRODUCT CODE: 1547874
PUBLISHER: Value Market Research | PRODUCT CODE: 1547874
The global demand for GaN Power Device Market is presumed to reach the market size of nearly USD 3161.52 Million by 2032 from USD 112.07 Million in 2023 with a CAGR of 39.65% under the study period 2024-2032.
GaN, which is the symbol for gallium nitride is referred for the GaN transistors which have taken over the market as the substitute of the silicon-based transistors. They have more power output and can be used for far more easy and complicated device fabrication, which makes them ideal for use instead of the older silicon transistors. Also, for the given resistance and breakdown voltage values, the GaN transistors can be used for developing more compact devices. These GaN transistors become extremely useful when used for modern electronics like hybrid electric vehicles, photovoltaic converters, and RF switching.
The market for GaN power devices has been growing steadily since the increase in the use of various electronics for our daily activities. The increase in demand for telecommunication devices, LIDAR, AC adaptors, and various wireless devices has been acting as the main catalyst for the GaN power devices market. The coronavirus outbreak has also acted as a market driver for the GaN power devices due to the increase in demand for modems and internet routers for people working from home. Most of the modern electronic devices and the hybrid devices act as the main driving factor for the GaN transistors. The only restraint being faced by the market for GaN devices is the preference towards silicon-based devices when it comes to operating at high voltages.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of GaN Power Device. The growth and trends of GaN Power Device industry provide a holistic approach to this study.
This section of the GaN Power Device market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the GaN Power Device market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the GaN Power Device market include Efficient Power Conversion Corporation Inc., Fujitsu Limited, GaN Power Inc., GaN Systems, Infineon Technologies, Navitas Semiconductor, NexGen Power Systems, On Semiconductors, Panasonic Corporation, Power Integrations Inc., ROHM CO LTD., SOITEC, Texas Instruments Incorporated, Transphorm Inc., VisIC Technologies. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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