PUBLISHER: Value Market Research | PRODUCT CODE: 1274370
PUBLISHER: Value Market Research | PRODUCT CODE: 1274370
The global demand for GaN Substrate Market is presumed to reach the market size of nearly USD 646.97 MN by 2030 from USD 227.12 MN in 2022 with a CAGR of 13.98% under the study period of 2022 - 2030. Regarding volume, the market was calculated XX Million Units in 2022 and forecast to touch XX Million Units by 2030 with a CAGR of XX% during 2023-2030.
Gallium nitride (GaN) is a semiconductor employed in high-power, high-frequency uses. The GaN material is a thin layer produced on other materials such as sapphire, silicon, and silicon carbide. GaN Substrate is a semiconductor material with distinct benefits over other common semiconductor materials such as Silicon, Silicon Carbide, Aluminum, Sapphire, and others. GaN enhances the device's performance by removing structural flaws and improving vertical thermal and electrical conductivity.
Wider band gap, greater break-down voltage, larger critical electric field, and better thermal conductivity are some of the significant features for a sector to move from silicon technology to GaN substrate, expanding its market. Increased demand for GaN substrates in LED production, as well as increased acceptance of GaN industrial devices, are driving market expansion. Because of their high electron mobility, GaN Substrate is in high demand in the power electronics sector. As these devices aid in lowering conduction and switching losses and provide more efficiency in electronic systems, these GaN substrate applications are anticipated to accelerate the expansion of the GaN substrate market. On the contrary, high implementation costs are likely to hamper the growth of the GaN substrate market.
The report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of GaN substrate. The growth and trends of GaN Substrate Industry provide a holistic approach to this study.
This section of the GaN substrate market report provides detailed data on the segments by analyzing them at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the GaN Substrate market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the GaN substrate market include Kyma Technologies Inc., Kyocera Corporation, Mitsubishi Chemical Corporation, MTI Corporation, NGK Insulators Ltd., Shin-Etsu Chemical Co. Ltd., SOITEC, Sumitomo Chemical Co. Ltd., Toyoda Gosei Co. Ltd., Xiamen Powerway Advanced Material Co. Ltd. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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Kindly note that the above listed are the basic tables and figures of the report and are not limited to the TOC.