PUBLISHER: The Business Research Company | PRODUCT CODE: 1706901
PUBLISHER: The Business Research Company | PRODUCT CODE: 1706901
Silicon carbide (SiC) power semiconductors are a class of semiconductor devices that utilize silicon carbide as the semiconductor material, replacing traditional silicon. These devices are primarily employed in power electronics applications due to several advantageous properties of silicon carbide over silicon, including higher breakdown voltage, lower switching losses, and better performance at higher operating temperatures.
The main types of silicon carbide power semiconductors include metal-oxide-semiconductor field-effect transistors (MOSFETs), hybrid modules, schottky barrier diodes (SBDs), insulated gate bipolar transistors (IGBTs), bipolar junction transistors (BJTs), pin diodes, junction FETs (JFETs), and other specialized types. MOSFETs are three-terminal devices where current flows between two terminals (source and drain), with the third terminal (gate) controlling the current flow. Silicon carbide power semiconductors are categorized by various voltage ranges such as 301-900 V, 901-1700 V, and above 1701 V, and are available in different wafer types including SiC epitaxial wafers and blank SiC wafers. These semiconductors find applications across diverse fields including electric vehicles (EVs), photovoltaics, power supplies, industrial motor drives, electric vehicle charging infrastructure, RF devices, and other sectors. They cater to various end-users such as industrial, automotive, energy and power, information technology and telecom, transportation, aerospace and defense, among others.
The silicon carbide power semiconductors are metal-oxide-semiconductor market research report is one of a series of new reports from The Business Research Company that provides silicon carbide power semiconductors are metal-oxide-semiconductor market statistics, including silicon carbide power semiconductors are metal-oxide-semiconductor industry global market size, regional shares, competitors with a silicon carbide power semiconductors are metal-oxide-semiconductor market share, detailed silicon carbide power semiconductors are metal-oxide-semiconductor market segments, market trends, and opportunities, and any further data you may need to thrive in the silicon carbide power semiconductors are metal-oxide-semiconductor industry. This silicon carbide power semiconductors are metal-oxide-semiconductor research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenarios of the industry.
The silicon carbide power semiconductor market size has grown exponentially in recent years. It will grow from $1.24 billion in 2024 to $1.57 billion in 2025 at a compound annual growth rate (CAGR) of 26.6%. The growth in the historic period can be attributed to SiC power devices being used in electric vehicle charging systems, SiC power devices operating at higher temperatures, the expanding consumer electronics industry, advanced electronic components used in power, and the expanding automotive and renewable energy sector.
The silicon carbide power semiconductor market size is expected to see exponential growth in the next few years. It will grow to $3.99 billion in 2029 at a compound annual growth rate (CAGR) of 26.2%. The growth in the forecast period can be attributed to the prevalence of SiC discrete devices, the increase in the demand for consumer electronics and wireless communications, the rising penetration of electronic vehicles, the growing demand for energy-efficient battery-powered portable devices, and the advent of SiC power semiconductors. Major trends in the forecast period include technological advancements, new competitors to gain technology, the surge in innovations, product innovations, and technology launches.
The increasing adoption of electric vehicles (EVs) is expected to fuel the growth of the silicon carbide (SiC) power semiconductor market in the coming years. An electric vehicle is a type of vehicle powered by one or more electric motors. The rise in EV adoption is driven by technological advancements, regulatory support, consumer demand, and investments from the industry. Silicon carbide power semiconductors play a key role in EVs by enhancing efficiency, reducing weight, and improving overall performance compared to traditional silicon-based semiconductors. As EV manufacturers aim to optimize vehicle performance and enhance the driving experience, the use of SiC semiconductors is growing. For example, in January 2024, the U.S. Energy Information Administration reported that in 2023, hybrid vehicles, plug-in hybrid electric vehicles, and battery electric vehicles (BEVs) collectively accounted for 16.3% of total new light-duty vehicle (LDV) sales in the United States.
Leading companies in the silicon carbide power semiconductor market are concentrating on innovation, particularly in developing products such as silicon carbide MOSFETs, known for their high performance and reliability in industrial applications. Silicon carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) utilize SiC as the semiconductor material, offering superior characteristics. For instance, Nexperia B.V., a Netherlands-based semiconductor company, introduced discrete 1200 V MOSFETs in November 2023, leveraging silicon carbide technology. These advanced devices are designed to optimize efficiency and reliability, featuring ultra-low switching losses and enhanced thermal performance to ensure robust operation under challenging conditions.
In November 2022, Navitas Semiconductor, a US-based company specializing in power semiconductors with a focus on gallium nitride (GaN) and silicon carbide (SiC) technologies, acquired GeneSiC Semiconductor for an undisclosed sum. This acquisition enhances Navitas Semiconductor's capabilities in power electronics by adding GeneSiC's silicon carbide technology to its portfolio. As a result, Navitas can now offer high-efficiency, wide-bandgap solutions across various industries, including electric vehicles, renewable energy, and data centers. GeneSiC Semiconductor is a US-based manufacturer that specializes in silicon carbide (SiC), rectifiers, and thyristors.
Major companies operating in the silicon carbide power semiconductor market are Samsung Electronics Co. Ltd., Panasonic Corporation, Mitsubishi Electric Corporation, Toshiba Corporation, Eaton Corporation plc, Texas Instruments Inc., STMicroelectronics N.V., Infineon Technologies AG, BorgWarner Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Danfoss A/S, Microchip Technology Inc., ON Semiconductor Corporation, Fuji Electric Co. Ltd., ROHM Co. Ltd., Littelfuse Inc., Microsemi Corporation, Wolfspeed Inc., GeneSiC Semiconductor Inc.
Asia-Pacific was the largest region in the silicon carbide power semiconductor market in 2024. Asia-Pacific is expected to be the fastest-growing region in the market. The regions covered in the silicon carbide power semiconductor market report are Asia-Pacific, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
The countries covered in the silicon carbide power semiconductor market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
The silicon carbide power semiconductor market consists of sales of metal-oxide-semiconductor field-effect transistors (MOSFETs), junction field-effect transistors (JFETs), and insulated gate bipolar transistors (IGBTs). Values in this market are 'factory gate' values, that is the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD, unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
Silicon Carbide Power Semiconductor Global Market Report 2025 from The Business Research Company provides strategists, marketers and senior management with the critical information they need to assess the market.
This report focuses on silicon carbide power semiconductor market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
Where is the largest and fastest growing market for silicon carbide power semiconductor ? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward? The silicon carbide power semiconductor market global report from the Business Research Company answers all these questions and many more.
The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, competitive landscape, market shares, trends and strategies for this market. It traces the market's historic and forecast market growth by geography.
The forecasts are made after considering the major factors currently impacting the market. These include the Russia-Ukraine war, rising inflation, higher interest rates, and the legacy of the COVID-19 pandemic.