Global GaN Semiconductor Device Market 2024-2031

Description

List of Tables

GaN Semiconductor Device Market Size, Share & Trends Analysis Report by Product (GaN Radio Frequency Devices, Opto-semiconductors, and Power Semiconductors), by Device (Discrete Semiconductor and Integrated Semiconductor), by Application (Lighting & Lasers, Powers Drives, Supplies & inverters and Radio Frequency (RF)), and by End-Users (Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Industrial & Power, Information & Communication Technology and Others)Forecast Period (2024-2031)

GaN semiconductor device market is anticipated to grow at a significant CAGR of 13.4% during the forecast period (2024-2031). The market growth is attributed to the growing adoption of GaN semiconductor devices in infrastructure development and EV manufacturing, and the rising demand for consumer electronics drives the growth of the market. According to the World Semiconductor Trade Statistics (WSTS) Fall 2021 Semiconductor Industry Forecast, global semiconductor industry sales are forecasted to reach $601.0 billion in 2022 and $633.0 billion in 2023.

Market Dynamics

Growing Adoption of GaN-Based Radio Frequency (RF) Devices

Gallium nitride (GaN) device is emerging as the most common choice for power amplifier applications. Demand for widespread 5G deployment and predicted traffic surges are driving up demand for high frequency, high linearity, and affordable GaN power amplifiers. Wide bandgap materials like gallium nitride (GaN) have a lot to offer high-power radio frequency (RF) applications. Several significant physical and electrical features of gallium nitride set it apart from other conventional semiconductors like silicon. Gallium nitride (GaN) material has several additional important applications outside of radiofrequency (RF) applications, like power amplifiers (PA). These devices have grown increasingly desirable owing to their ever-increasing power and efficiency, notably for military-grade radar applications and space applications.

Increasing Demand for Higher Power Density and Efficiency

GaN-based power devices offer improved efficiency, lower switching losses, and increased power density. For this reason, GaN is perfect for systems like data centers, inverters, power supplies, and EV charging stations. The increasing demand for energy-efficient devices in industries such as automotive, renewable energy, and data centers is driving the adoption of GaN semiconductor devices. GaN-based power electronics are essential to EVs as they increase power density, decrease weight and size, and improve efficiency. GaN semiconductor devices are to be used more frequently in EV charging systems and powertrains as the demand for EVs rises on a global scale.

Market Segmentation

Our in-depth analysis of the global GaN semiconductor device market includes the following segments by component, product, application, and end-users.

Based on product, the market is sub-segmented into GaN radio frequency devices, opto-semiconductors, and power semiconductors.
Based on device, the market is sub-segmented into discrete semiconductors and integrated semiconductors.
Based on application, the market is sub-segmented into lighting & lasers, power drives, supplies & inverters, and radio frequency (RF).
Based on end-users, the market is sub-segmented into automotive, consumer electronics, defense & aerospace, healthcare, industrial & power, information & communication technology and others (healthcare).

GaN Radio Frequency Devices is Projected to Emerge as the Largest Segment

Based on the product, the global GaN semiconductor device market is sub-segmented into GaN radio frequency devices, opto-semiconductors and power semiconductors. Among these GaN radio frequency devices sub-segment is expected to hold the largest share of the market. The primary factor supporting the segment's growth includes increased demand for GaN radio frequency devices in civil and military pulsed radar amplifiers. Additionally, the higher operating frequencies provided by GaN semiconductors make them suitable for use in radar communication, terrestrial radios, and military jammers. For instance, in September 2021, Tagore Technology Inc. introduced high-power GaN-based RF switches generation RF switches featuring 10W to 100W of average power. The new switches offer insertion loss, power handling, and harmonic performance. The TS8x family of products is best suited for post-power amplifier (PA) harmonics filter switching for tactical and military communications (Mil Comm), land mobile radios (LMR) and private mobile radios (PMR).

Information & Communication Technology Sub-segment to Hold a Considerable Market Share

Based on end-users, the global GaN semiconductor device market is sub-segmented into automotive, consumer electronics, defense & aerospace, healthcare, industrial & power, information & communication technology, and others (healthcare).Among these, the information & communication technology sub-segment is expected to hold considerable share of the market. The segmental growth is attributed to the increasing adoption of 5G technology to enable faster data transfer speeds and improved efficiency. GaN semiconductor devices are widely used in high-frequency amplifier applications, including 5G. The transistors used in communication devices are required to support higher power and higher frequencies for an increased volume of data transmission. For instance, in October 2022, Sumitomo Electric Industries, Ltd. Developed a gallium nitride transistor (GaN-HEMT*¹) that uses N-polar GaN and, for the gate insulating layer, the first hafnium (Hf)-based, highly heat-resistant, high-dielectric material, setting its sights on the post-5G era, which realize even greater capacity and high-speed communications.

Regional Outlook

The global GaN semiconductor device market is further segmented based on geography including North America (the US, and Canada), Europe (UK, Italy, Spain, Germany, France, and the Rest of Europe), Asia-Pacific (India, China, Japan, South Korea, and Rest of Asia-Pacific), and the Rest of the World (the Middle East & Africa, and Latin America).

Increasing Adoption of GaN Semiconductor Devices in Asia-Pacific

The growing demand for reliable communication devices has expanded as a result of the expanding defense budgets in countries such as China, South Korea, and India, and this demand is expected to boost the market for GaN semiconductor devices.
The development of telecommunications infrastructure and the notable rise in the usage of wireless electronic devices increase demand for GaN semiconductor devices in the region.

Global GaN semiconductor device Market Growth by Region 2024-2031

Source: OMR Analysis

North America Holds Major Market Share

Among all the regions, North America holds a significant share owing to numerous prominent companies and GaN semiconductor device providers. The growth is attributed to the growing adoption of GaN semiconductor devices in the defense and aerospace industry, automotive, consumer electronics, and industrial & power contributing to the regional growth. Furthermore, semiconductor companies in the region introducing GaN technology to improve overall efficiency. For instance, in March 2024, Navitas Semiconductor introduced a 3.2kW data center device power platform utilizing the latest GaN technology enabling over 100W/in3 and over 96.5% efficiency. Now, Navitas is releasing a 4.5kW platform enabled by a combination of GaN and SiC to push densities over 130W/in3 and efficiencies over 97.0%.The platform utilizes newer GaN and SiC technologies and further advances in architecture to set all-new industry standards in power density, efficiency, and time-to-market.

Market Players Outlook

Note: Major Players Sorted in No Particular Order.

The major companies serving the global GaN semiconductor device market include Infineon Technologies AG, Microchip Technology Inc., Mitsubishi Electric Corp., Northrop Grumman Corp., Taiwan Semiconductor Manufacturing Company Ltd., among others. The market players are increasingly focusing on business expansion and product development by applying strategies such as collaborations, mergers, and acquisitions to stay competitive in the market. For instance, in November 2021, Vitesco Technologies and GaN Systems Inc. collaborated to co-develop GaN power semiconductor technology. Power electronics based on GaN technology help to increase vehicle device range and to further improve the total energy efficiency of cars.

Recent Development

In May 2022, Navitas Semiconductor in gallium nitride (GaN) power integrated circuits announced its GaN Fast technology selected to charge Motorola's flagship Motorola edge+ (2022) smartphone. The TurboPower 68W (MC-681) charger has arrived in the US as a standalone accessory to bring a fast charging experience.

The Report Covers:

Market value data analysis of 2023 and forecast to 2031.
Annualized market revenues ($ million) for each market segment.
Country-wise analysis of major geographical regions.
Key companies operating in the global GaN semiconductor device market. Based on the availability of data, information related to new product launches, and relevant news is also available in the report.
Analysis of business strategies by identifying the key market segments positioned for strong growth in the future.
Analysis of market-entry and market expansion strategies.
Competitive strategies by identifying 'who-stands-where' in the market.

Product Code: OMR2028338

1.Report Summary

Current Industry Analysis and Growth Potential Outlook
1.1.Research Methods and Tools
1.2.Market Breakdown
- 1.2.1.By Segments
- 1.2.2.By Region

2.Market Overview and Insights

2.1.Scope of the Report
2.2.Analyst Insight & Current Market Trends
- 2.2.1.Key Findings
- 2.2.2.Recommendations
- 2.2.3.Conclusion

3.Competitive Landscape

3.1.Key Company Analysis
3.2.Microchip Technology Inc.
- 3.2.1.Overview
- 3.2.2.Financial Analysis
- 3.2.3.SWOT Analysis
- 3.2.4.Recent Developments
3.3.Mitsubishi Electric Corp.
- 3.3.1.Overview
- 3.3.2.Financial Analysis
- 3.3.3.SWOT Analysis
- 3.3.4.Recent Developments
3.4.Northrop Grumman Corp.
- 3.4.1.Overview
- 3.4.2.Financial Analysis
- 3.4.3.SWOT Analysis
- 3.4.4.Recent Developments
3.5.NXP Semiconductors N.V.
- 3.5.1.Overview
- 3.5.2.Financial Analysis
- 3.5.3.SWOT Analysis
- 3.5.4.Recent Developments
3.6.Taiwan Semiconductor Manufacturing Company Ltd.
- 3.6.1.Overview
- 3.6.2.Financial Analysis
- 3.6.3.SWOT Analysis
- 3.6.4.Recent Developments
3.7.Key Strategy Analysis

4.Market Segmentation

4.1.Global GaN Semiconductor Device Market by Product
- 4.1.1.GaN Radio Frequency Devices
- 4.1.2.Opto-semiconductors
- 4.1.3.Power Semiconductors
4.2.Global GaN Semiconductor Device Market by Device
- 4.2.1.Discrete Semiconductor
- 4.2.2.Integrated Semiconductor
4.3.Global GaN Semiconductor Device Market by Application
- 4.3.1.Lighting & Lasers
- 4.3.2.Powers Drives
- 4.3.3.Supplies & inverters
- 4.3.4.Radio Frequency (RF)
4.4.Global GaN Semiconductor Device Market by End-Users
- 4.4.1.Automotive
- 4.4.2.Consumer Electronics
- 4.4.3.Defense & Aerospace
- 4.4.4.Healthcare
- 4.4.5.Industrial & Power
- 4.4.6.Information & Communication Technology
- 4.4.7.Others (Healthcare)

5.Regional Analysis

5.1.North America
- 5.1.1.United States
- 5.1.2.Canada
5.2.Europe
- 5.2.1.UK
- 5.2.2.Germany
- 5.2.3.Italy
- 5.2.4.Spain
- 5.2.5.France
- 5.2.6.Rest of Europe
5.3.Asia-Pacific
- 5.3.1.China
- 5.3.2.India
- 5.3.3.Japan
- 5.3.4.South Korea
- 5.3.5.Rest of Asia-Pacific
5.4.Rest of the World
- 5.4.1.Latin America
- 5.4.2.The Middle East & Africa

6.Company Profiles

6.1.Analog Devices, Inc.
6.2.Broadcom Inc.
6.3.Efficient Power Conversion Corp.
6.4.GaNPower International Inc.
6.5.Infineon Technologies AG
6.6.MACOM Technology Solutions Inc.
6.7.Navitas Semiconductor
6.8.NGK INSULATORS, LTD.
6.9.Panasonic Corp.
6.10.Power Integrations, Inc.
6.11.Qorvo, Inc.
6.12.Semiconductor Components Industries, LLC
6.13.Texas Instruments Inc.
6.14.Transphorm Inc.
6.15.VisIC Technologies Ltd.