PUBLISHER: Mordor Intelligence | PRODUCT CODE: 1644768
PUBLISHER: Mordor Intelligence | PRODUCT CODE: 1644768
The Global RF & Microwave Power Transistors Market is expected to register a CAGR of 6.75% during the forecast period.
The major drivers of the Global RF/Microwave Power Transistor for 5G market include rising demand, increased investment in research & development, and rapid approval of new technologies. The RF microwave power transistor amplifies or switches high-power signals in aerospace and the military. Radar systems, communication systems, electronic warfare systems, and missile guidance systems all employ it as a transmitter or receiver. The RF microwave power transistor increases efficiency while reducing size and weight in these systems.
In communication, the RF Microwave Power Transistor is used to amplify or switch the power of microwave transmission. It can also be used to control the signal's direction and as an amplifier or oscillator. It can also be used as a switching device to direct signals between different areas of a circuit. The RF Microwave Power Transistor is an important component in microwave system design.
Due to the recent increase in information speed and capacity, the output of high-power semiconductor modules used in information communication and power fields as well as the number of semiconductor chips mounted per unit area, are increasing, and overheating has emerged as an important issue. In order to produce high thermal conductivity and low thermal expansion characteristics, metal-diamond composite materials are attracting attention.
The Good System has managed to produce the world's best heat dissipation attributes, with 800W/mK-class thermal conductivity and 8PPM thermal expansion coefficient, as a heat dissipation material for radiofrequency (RF) power transistors for 56G wireless communication and high-power insulated-gate bipolar transistors (IGBT) for electric vehicles.
Further, the covid-19 pandemic significantly impacted the market for power transistors. Due to the slowdown and lack of workforce availability around the world, semiconductor and electronic manufacturing facilities came to a standstill. COVID-19 resulted in a major and sustained dip in factory utilization, travel prohibitions, and production site closures, resulting in a slowdown in the power transmission industry's growth.
As stated by Ericsson, 5G is anticipated to be the most widely deployed mobile communication technology in history, covering roughly 75% of the global population by 2027.
The 5G enabled devices market is analyzed to grow rapidly in the coming years, owing to rising data processing requirements and increased consumption. To accommodate the growing demand for 5G enabled devices, semiconductor manufacturers for 5G enabled smartphones will experience increased demand for 5G chips. The rise in semiconductor chips will help to advance the semiconductor industry, boosting demand for power transistors.
For 5G and 6G infrastructure, RF GaN-on-Silicon has significant potential. Early-generation RF power amplifiers were dominated by the long-term incumbent RF power technology, laterally-diffused metal-oxide-semiconductor (LDMOS) (PAs). GaN can provide improved RF characteristics and much higher output power for these RF PAs than LDMOS. Additionally, it can be made on silicon or silicon-carbide (SiC) wafers.
In December 2021, Microchip Technology Inc. added additional MMICs and discrete transistors to its Gallium Nitride (GaN) Radio Frequency (RF) power device portfolio, spanning frequencies up to 20 gigahertz (GHz). The devices combine high power-added efficiency (PAE) and high linearity to achieve new levels of performance in a wide range of applications, including 5G, electronic warfare, satellite communications, commercial and defense radar systems, and test equipment.