PUBLISHER: Market Research Future | PRODUCT CODE: 1499362
PUBLISHER: Market Research Future | PRODUCT CODE: 1499362
Global GaN on Si EPI wafers Market Research Report Information By Structure (Lateral GaN on Si, Vertical GaN on Si, and Hybrid GaN on Si), By Application (Low power applications, medium power applications, High power applications, and Very high power applications), By Procurement model (Tender based and direct purchase), By Industry Vertical (IT & Telecom, Consumer electronics, Automotive, Aerospace & Defense, Others) And By Region (North America, Europe, Asia-Pacific, Middle East & Africa, And South America) -Forecast Till 2030
The GaN on Si EPI wafers market industry is anticipated to experience a compound annual growth rate (CAGR) of 16.6%. This growth is expected to occur over the forecast period of 2024 to 2030. The growth of the GaN on Si EPI wafers market is being driven by the following key market drivers: the growing demand for wireless charging, the increasing demand for higher power density power electronics, and the significant demand from the consumer electronics and automotive sectors.
The GaN on Si EPI wafer market is primarily driven by the growing demand for power electronics with a higher power density. The trend toward miniaturization of electronic devices and the growing demand for high-performance electronic products are two of the primary factors driving the GaN on Si EPI wafer market. The demand for power electronics that are more compact and efficient is increasing as electronic devices become more complex and smaller. In comparison to conventional silicon-based power electronics, GaN on Si EPI wafers provide a higher power density and efficiency, rendering them the optimal choice for high-power applications that necessitate more efficient and compact power electronics. The increasing demand for 5G technology is another factor driving the GaN on Si EPI wafer market. 5G technology necessitates the utilization of new materials and technologies, including GaN, to achieve higher data rates and frequencies than previous generations of wireless technology. GaN is currently employed in RF applications, and it is anticipated that its utilization in 5G technology will expand substantially in the years ahead.
The GaN on Si EPI wafers market in this report has been segmented into three varieties based on structure: Lateral GaN on Si, Vertical GaN on Si, and Hybrid GaN on Si.
In this report, the GaN on Si EPI wafers Market has been segmented by application (low-power, medium-power, high-power, and very high-power).
The GaN on Si EPI wafers Market has been segmented into Tender Based and Direct Purchase based on the procurement model in this report.
Direct purchase is a procurement model that is frequently employed in a variety of industries to acquire GaN on Si EPI wafers.
The GaN on Si EPI wafers market in this report has been segmented according to the following categories: aerospace and defense, automotive, consumer electronics, safety and security, and IT & telecom.
Regional Perspectives
North America, Europe, Asia-Pacific, Middle East & Africa, and South America comprise the global GaN on Si EPI wafer market, which is segmented by region. The Asia-Pacific region has the largest market share, accounting for 44.1% of the total share. North America has the second-largest market share, accounting for 29.3% of the total share.
North America has been further divided into the United States, Canada, and Mexico. Due to the presence of notable GaN on Silicon companies such as Texas Instruments Incorporated and NXP USA Inc, North America holds one of the largest market segments in the power market for GaN on Silicon. The GaN market's main players have been developing the technology for more than 15 years and have accumulated a substantial amount of knowledge, skill, and competence. However, the most significant development is the almost fervent sense of faith they have developed in the long-term potential of technology.
The Asia-Pacific region has been further divided into the following categories: China, Japan, India, and the Rest of AsiaPacific. Another promising market for GaN on Si for power is the Asia-Pacific region. The Asia-Pacific region is a hub for semiconductor, aerospace, and automotive technology. China, India, and Japan hold substantial market shares in the energy-efficient electronics sector as a result of their swiftly expanding markets. One of the primary factors contributing to the expansion of GaN on Si for power in the Asia-Pacific region is the rapidly evolving semiconductor market.
Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA, Semiconductor Components Industries, Llc, Rohm Company Ltd, Broadcom Inc, MACOM Technology Solutions Inc, WOLFSPEED, INC, X-FAB Silicon Foundries SE, NXP Semiconductors, Renesas Electronics Corp, VisIC Technologies Ltd, and Qorvo Inc. are among the major players in the market.
IN HIGH-VOLTAGE SEMICONDUCTOR APPLICATIONS RESTRAINS 43