PUBLISHER: IMARC | PRODUCT CODE: 1520437
PUBLISHER: IMARC | PRODUCT CODE: 1520437
The global next generation memory market size reached US$ 6.1 Billion in 2023. Looking forward, IMARC Group expects the market to reach US$ 42.8 Billion by 2032, exhibiting a growth rate (CAGR) of 23.7% during 2024-2032.
Next generation memory refers to a fast, efficient and cost-effective storage solution that can store more data than silicon chips. It consequently finds extensive applications in the telecommunications, information technology (IT), and banking, financial services and insurance (BFSI) industries across the globe. At present, there is a surge in the requirement for high bandwidth, low power consumption, and highly scalable memory devices that rely on artificial intelligence (AI), the Internet of things (IoT), big data and other technologies. This, in turn, is catalyzing the demand for next generation memory.
There is presently a significant rise in the traction of universal memory worldwide. This, in confluence with the burgeoning electronics industry, represents one of the key factors bolstering the growth of the market. Apart from this, with the growing sales of smartphones, tablets, universal serial bus (USB) drives, and solid-state drives (SSD), the demand for NOT-AND (NAND) flash memory, which is a type of non-volatile storage technology that does not need energy to retain data is also increasing. Besides this, high-bandwidth memory (HBM), a next generation memory technology for graphics, is rapidly being used in leading-edge graphics, networking, high-performance computing (HPC), and artificial intelligence (AI) systems. For instance, it is utilized in decoders, fully autonomous vehicles, neural network designs, and other advanced applications that require low power and enormous bandwidth. This, coupled with the rising usage of wearable devices, is facilitating the growth of the market. Other factors, such as the increasing use of connected cars and considerable growth in the IT industry, are projected to create a positive outlook for the market in the upcoming years.
IMARC Group provides an analysis of the key trends in each sub-segment of the global next generation memory market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on technology, wafer size, storage type and application.
Non-Volatile
Magneto-Resistive Random-Access Memory (MRAM)
Ferroelectric RAM (FRAM)
Resistive Random-Access Memory (ReRAM)
3D Xpoint
Nano RAM
Other Non-Volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
Volatile
Hybrid Memory Cube (HMC)
High-Bandwidth Memory (HBM)
Mass Storage
Embedded Storage
Others
BFSI
Consumer Electronics
Government
Telecommunications
Information Technology
Others
North America
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology, Crossbar Inc., Fujitsu Limited, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Micron Technology Inc., Nantero Inc., Samsung Electronics Co. Ltd., SK hynix Inc., Spin Memory Inc. and Taiwan Semiconductor Manufacturing Co. Ltd.