PUBLISHER: Grand View Research | PRODUCT CODE: 1511879
PUBLISHER: Grand View Research | PRODUCT CODE: 1511879
The global gallium nitride semiconductor devices market is anticipated to reach USD 12.47 billion by 2030 and is projected to grow at a CAGR of 26.4% from 2024 to 2030, according to a new report by Grand View Research. The growing demand for fast chargers used in various consumer electronics applications worldwide is expected to drive market growth. Various smartphone companies such as Apple and Samsung are making efforts to develop fast chargers to enhance their customer experience and gain a competitive edge.
Gallium nitride semiconductors are also used in data center servers to offer potential energy savings, thereby contributing to the growth of the market. The proliferation of cloud technology necessitates the expansion of data centers, which are significant energy consumers. One strategy to mitigate energy loss involves eliminating an entire stage of power conversion when transferring power within the data center.
Currently, power undergoes two conversions: from 48 V on the backplane to 12 V for distribution on processing boards and finally to around 1 V at the point of use. Leveraging the high switching speed, compact size, and improved efficiency of gallium nitride, power supply designers can now convert directly from 48 V to the required 1 V at the point of use, bypassing the intermediate step at 12 V. This single-stage architecture presents substantial potential energy savings, especially considering the rapid growth of computing power and data centers supporting cloud infrastructure.
The enhanced-mode version of GaN is widely used in the development of space applications, and it is further driving market growth. The demand for commercial GaN power devices is high among businesses as these devices offer high performance compared to traditional silicon technology-based Rad Hard devices. GaN power devices are used in applications such as drones, satellites, spacecraft, and robotics.