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PUBLISHER: DataM Intelligence | PRODUCT CODE: 1678803

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PUBLISHER: DataM Intelligence | PRODUCT CODE: 1678803

Global Silicon Carbide (SiC) Semiconductor Market - 2025-2032

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Global Silicon Carbide (SiC) Semiconductor Market reached US$ 810.2 million in 2024 and is expected to reach US$ 2,637.09 million by 2032, growing with a CAGR of 15.9% during the forecast period 2025-2032.

The Silicon Carbide (SiC) semiconductor market is experiencing robust growth, driven by the increasing demand for high-power, high-efficiency applications. SiC semiconductors offer superior properties over traditional silicon, including higher thermal conductivity, greater energy efficiency, and the ability to operate at higher voltages and temperatures. The market is gaining momentum across industries such as electric vehicles (EVs), renewable energy, aerospace, and industrial power electronics.

For instance, in 2024, STMicroelectronics, introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains.

Additionally, in 2025, Infineon Technologies AG, has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide first-class SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles.

Moreover, the renewable energy sector benefits significantly from SiC semiconductors. For example, Infineon Technologies supplies SiC solutions for solar inverters, reducing energy losses and improving power density. The aerospace industry also sees advancements, with NASA's Glenn Research Center developing SiC circuits capable of operating at 930°F (500°C) for thousands of hours, critical for missions like Venus exploration. These instances highlight SiC's potential in enhancing performance, reducing system costs, and supporting global sustainability goals, making it a key driver in the transition toward a greener future.

Dynamics

Rising in Aerospace and Defense Applications

The rising aerospace and defense applications are significant drivers of the Silicon Carbide (SiC) Semiconductor Market, as SiC-based devices offer unique advantages that are critical for modern aerospace and defense systems. These industries demand high-performance, reliable, and efficient electronic components that can operate under extreme conditions, such as high temperatures, high voltages, and harsh environments.

For instance, according to PCIM Europe in Germany, 2024, analyzes the potential limits of SiC technology in aerospace applications, proposing the solutions developed by CoolCAD Electronics for usage in high-altitude and space environments. Silicon carbide power devices have emerged as a potentially superior alternative to conventional silicon-based components, offering substantial benefits for high-power applications on spacecraft and electric aircraft.

Additionally, in 2024, U.S. Navy avionics experts are looking to Northrop Grumman Corp. to ensure a long-term and steady supply of silicon carbide components for radar power electronics aboard the Navy's E-2D Advanced Hawkeye carrier-based surveillance aircraft. Silicon Carbide provides better switching performance than silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature.

Growing Demand for High-Power Applications

The growing demand for high-power applications significantly drives the Silicon Carbide (SiC) semiconductor market due to SiC's superior properties, including high thermal conductivity, high breakdown voltage, and energy efficiency. These attributes make SiC semiconductors ideal for electric vehicles (EVs), renewable energy systems, and industrial power supplies.

For instance, in 2025, Engineers at NASA's Glenn Research Center have developed silicon carbide (SiC) circuits capable of withstanding extreme conditions, including 930°F (500°C) for thousands of hours and operating across a -310°F (-190°C) to 1,490°F (812°C) temperature range. These advancements are crucial for Venus exploration and have broader applications in aerospace, electric vehicles, and renewable energy systems, where SiC's ability to handle higher voltages, temperatures, and radiation offers significant performance and efficiency benefits.

Additionally, Tesla pioneered the use of Silicon Carbide (SiC) MOSFETs in the inverters of its Model 3, significantly improving energy efficiency and contributing to increased driving range by minimizing power losses compared to traditional silicon-based transistors; this made the Model 3 one of the first electric vehicles to widely adopt SiC technology in its powertrain. Moreover, Siemens integrates SiC components in industrial drives, enhancing performance and lowering energy consumption.

High Investment Costs

The high manufacturing cost of Silicon Carbide (SiC) semiconductors is a significant restraint due to the complex and resource-intensive production processes. SiC wafers are more expensive than traditional silicon wafers, with 6-inch SiC wafers costing around $1,000-$2,000, compared to $25-$50 for silicon wafers. This substantial cost difference arises from the intricate crystal growth process (sublimation) and higher defect rates, resulting in lower yields.

For instance, STMicroelectronics and Wolfspeed face challenges in scaling SiC production due to these high costs, affecting the pricing of power devices for electric vehicles (EVs) and renewable energy systems. Therefore, EV manufacturers like Lucid Motors and Rivian may encounter higher production expenses when adopting SiC inverters and powertrains.

Segment Analysis

The global silicon carbide (sic) semiconductor market is segmented based on type, wafer size, technology, application and region.

SiC Power Modules: Leading the Charge in High-Efficiency Semiconductor Applications

The SiC power modules segment dominates the Silicon Carbide (SiC) semiconductor market due to its ability to handle higher voltages, temperatures, and switching frequencies with improved energy efficiency and power density compared to silicon-based modules. These advantages make SiC power modules ideal for electric vehicles (EVs), renewable energy systems, and industrial power applications, where efficiency and compact designs are critical.

For instance, in 2023, Mitsubishi Electric Corporation had agreed with Coherent Corp to invest USD 500 million (approx. 75 billion yen1) in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.

Additionally, in 2022, Fuji Electric Co., announce that it has made a decision to carry out capital investment in Fuji Electric Tsugaru Semiconductor Co., Ltd, one of power semiconductor production bases, for an increase in the production of SiC power semiconductors. Mass production is planned to begin in fiscal 2024. These real-world applications demonstrate how SiC power modules lead the market by supporting the global push for energy-efficient, high-performance power solutions across key industries.

Geographical Penetration

Advancing EVs, Renewables, and Aerospace in North America

North America dominates the Silicon Carbide (SiC) semiconductor market due to the presence of leading industry players, robust electric vehicle (EV) adoption, and significant investments in renewable energy and aerospace sectors. The region's focus on energy efficiency, advanced manufacturing, and technological innovation drives the demand for SiC semiconductors in high-power applications.

For instance, Wolfspeed, a key player based in the U.S., opened the world's largest SiC materials factory in New York to meet the growing demand for SiC power devices. In the EV sector, Tesla, headquartered in California, uses SiC MOSFETs in its Model 3 inverters, improving energy efficiency and extending vehicle range.

The aerospace industry also plays a pivotal role, with NASA's Glenn Research Center developing SiC circuits capable of withstanding extreme temperatures for space exploration missions, such as those targeting Venus. These developments underline North America's leadership in leveraging SiC technology across diverse, high-growth sectors.

Competitive Landscape

The major global players in the market include Infineon Technologies, Littelfuse, ON Semiconductor, Wolfspeed Inc, Fuji Electric, X-FAB, GeneSiC Semiconductor, Mitsubishi Electric, STMicroelectronics, ROHM Semiconductor, and among others.

Key Developments

  • In 2023, Vitesco Technologies, a leading international manufacturer of modern drive technologies and electrification solutions, has secured strategically important capacities in energy-efficient silicon carbide power semiconductors through a long-term supply partnership with ROHM - worth over one billion US dollars until 2030.
  • In 2025, Onsemi, had completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash. The addition of SiC JFET technology will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.

By Type

  • SiC Discrete Devices
  • SiC Power Modules
  • SiC Substrates and Wafers
  • Others

By Wafer Size

  • 2-inch Wafers
  • 4-inch Wafers
  • 6-inch Wafers
  • 8-inch Wafers

By Technology

  • Planar SiC Technology
  • Trench SiC Technology

By Application

  • Automotive
  • Consumer Electronics
  • Industrial
  • Aerospace & Defense
  • Telecommunications
  • Energy & Power
  • Others

By Region

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • France
    • Italy
    • Spain
    • Rest of Europe
  • South America
    • Brazil
    • Argentina
    • Rest of South America
  • Asia-Pacific
    • China
    • India
    • Japan
    • Australia
    • Rest of Asia-Pacific
  • Middle East and Africa

Why Purchase the Report?

  • To visualize the global silicon carbide (sic) semiconductor market segmentation based on type, wafer size, technology, application and region.
  • Identify commercial opportunities by analyzing trends and co-development.
  • Excel data sheet with numerous data points at the silicon carbide (sic) semiconductor market level for all segments.
  • PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
  • Product mapping available as excel consisting of key products of all the major players.

The global Silicon Carbide (SiC) Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

  • Manufacturers/ Buyers
  • Industry Investors/Investment Bankers
  • Research Professionals
  • Emerging Companies
Product Code: ICT9214

Table of Contents

1. Methodology and Scope

  • 1.1. Research Methodology
  • 1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

  • 3.1. Snippet by Type
  • 3.2. Snippet by Wafer Size
  • 3.3. Snippet by Technology
  • 3.4. Snippet by Application
  • 3.5. Snippet by Region

4. Dynamics

  • 4.1. Impacting Factors
    • 4.1.1. Drivers
      • 4.1.1.1. Rising in Aerospace and Defense Applications
      • 4.1.1.2. Growing Demand for High-Power Applications
    • 4.1.2. Restraints
      • 4.1.2.1. High Investment Costs
    • 4.1.3. Opportunity
    • 4.1.4. Impact Analysis

5. Industry Analysis

  • 5.1. Porter's Five Force Analysis
  • 5.2. Supply Chain Analysis
  • 5.3. Pricing Analysis
  • 5.4. Regulatory Analysis
  • 5.5. Sustainable Analysis
  • 5.6. DMI Opinion

6. By Type

  • 6.1. Introduction
    • 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 6.1.2. Market Attractiveness Index, By Type
  • 6.2. SiC Discrete Devices*
    • 6.2.1. Introduction
    • 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
  • 6.3. SiC Power Modules
  • 6.4. SiC Substrates and Wafers
  • 6.5. Others

7. By Wafer Size

  • 7.1. Introduction
    • 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 7.1.2. Market Attractiveness Index, By Wafer Size
  • 7.2. 2-inch Wafers*
    • 7.2.1. Introduction
    • 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
  • 7.3. 4-inch Wafers
  • 7.4. 6-inch Wafers
  • 7.5. 8-inch Wafers

8. By Technology

  • 8.1. Introduction
    • 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 8.1.2. Market Attractiveness Index, By Technology
  • 8.2. Planar SiC Technology*
    • 8.2.1. Introduction
    • 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
  • 8.3. Trench SiC Technology

9. By Application

  • 9.1. Introduction
    • 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
    • 9.1.2. Market Attractiveness Index, By Application
  • 9.2. Automotive*
    • 9.2.1. Introduction
    • 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
  • 9.3. Consumer Electronics
  • 9.4. Industrial
  • 9.5. Aerospace & Defense
  • 9.6. Telecommunications
  • 9.7. Energy & Power
  • 9.8. Others

10. Sustainability Analysis

  • 10.1. Environmental Analysis
  • 10.2. Economic Analysis
  • 10.3. Governance Analysis

11. By Region

  • 11.1. Introduction
    • 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
    • 11.1.2. Market Attractiveness Index, By Region
  • 11.2. North America
    • 11.2.1. Introduction
    • 11.2.2. Key Region-Specific Dynamics
    • 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
    • 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
      • 11.2.7.1. US
      • 11.2.7.2. Canada
      • 11.2.7.3. Mexico
  • 11.3. Europe
    • 11.3.1. Introduction
    • 11.3.2. Key Region-Specific Dynamics
    • 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
    • 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
      • 11.3.7.1. Germany
      • 11.3.7.2. UK
      • 11.3.7.3. France
      • 11.3.7.4. Italy
      • 11.3.7.5. Spain
      • 11.3.7.6. Rest of Europe
  • 11.4. South America
    • 11.4.1. Introduction
    • 11.4.2. Key Region-Specific Dynamics
    • 11.4.3. Key Region-Specific Dynamics
    • 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
    • 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
      • 11.4.8.1. Brazil
      • 11.4.8.2. Argentina
      • 11.4.8.3. Rest of South America
  • 11.5. Asia-Pacific
    • 11.5.1. Introduction
    • 11.5.2. Key Region-Specific Dynamics
    • 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
    • 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
      • 11.5.7.1. China
      • 11.5.7.2. India
      • 11.5.7.3. Japan
      • 11.5.7.4. Australia
      • 11.5.7.5. Rest of Asia-Pacific
  • 11.6. Middle East and Africa
    • 11.6.1. Introduction
    • 11.6.2. Key Region-Specific Dynamics
    • 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
    • 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
    • 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
    • 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application

12. Competitive Landscape

  • 12.1. Competitive Scenario
  • 12.2. Market Positioning/Share Analysis
  • 12.3. Mergers and Acquisitions Analysis

13. Company Profiles

  • 13.1. Infineon Technologies*
    • 13.1.1. Company Overview
    • 13.1.2. Product Portfolio and Description
    • 13.1.3. Financial Overview
    • 13.1.4. Key Developments
  • 13.2. Littelfuse
  • 13.3. ON Semiconductor
  • 13.4. Wolfspeed Inc
  • 13.5. Fuji Electric
  • 13.6. X-FAB
  • 13.7. GeneSiC Semiconductor
  • 13.8. Mitsubishi Electric
  • 13.9. STMicroelectronics
  • 13.10. ROHM Semiconductor

LIST NOT EXHAUSTIVE

14. Appendix

  • 14.1. About Us and Services
  • 14.2. Contact Us
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