PUBLISHER: Data Bridge Market Research | PRODUCT CODE: 1455638
PUBLISHER: Data Bridge Market Research | PRODUCT CODE: 1455638
Global silicon carbide power semiconductors market is expected to reach USD 11,508,292.90 thousand by 2031 from USD 1,950,156.00 thousand in 2023, growing at a CAGR of 25.1% during the forecast period of 2024 to 2031.
Global Silicon Carbide Power Semiconductors Market, By Type (MOSFETS, Schottky Barrier Diodes (SBDs), Bipolar Junction Transistor (BJT), Hybrid Modules, SiC Bare Die, Pin Diode, Junction FET (JFET), and Others), Wafer Type (SiC Epitaxial Wafers and Blank SiC Wafers), Voltage Range (301 V to 900 V, 901 V to 1700 V, 1701 V & Above, and Less than 300 V), Wafer Size (2 Inch 3-Inch and 4-Inch, 6 Inch, 8 & 12 inch), Application (Electric Vehicle (EV), Inverters, Power Supplies, Photovoltaics, RF Devices, Industrial Motor Drives, and Others), Vertical (Automotive & Transportation, Data Centers, Industrial, Renewables/Grids, Consumer Electronics, Aerospace & Defense, Medical, and Others),Country (Germany, France, U.K., Italy, Turkey, Spain, Netherlands, Russia, Belgium, Switzerland, rest of Europe, U.S., Canada, Mexico, China, Japan, South Korea, India, Australia, Singapore, Malaysia, Thailand, Philippines, Indonesia, rest of Asia-Pacific, Saudi Arabia, U.A.E, South Africa, Israel, Egypt, rest of Middle East and Africa, Brazil, Argentina, and rest of South America) -Industry Trends and Forecast to 2031